A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs∕GaAs triple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1776638
Reference23 articles.
1. Linewidth enhancement factor of lattice-matched InGaNAs/GaAs quantum wells
2. Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells
3. Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy
4. Band-gap energy ofInxGa1−xNyAs1−yas a function of N content
5. MOVPE growth of GaAsN: surface study by AFM and optical properties
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy;Journal of Crystal Growth;2018-10
2. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing;Journal of Crystal Growth;2018-02
3. Energy eigenfunctions for position-dependent mass particles in a new class of molecular Hamiltonians;Journal of Mathematical Physics;2014-09
4. Annealing experiments of the GaP based dilute nitride Ga(NAsP);physica status solidi (a);2008-01
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