Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448656
Reference13 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
3. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
4. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
5. MOVPE growth of strained InGaAsN/GaAs quantum wells
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1. Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy;Applied Physics A;2014-10-01
2. Characterization of the post-thermal annealing effect for p-GaAs/i-InGaAsN/n-GaAs hetero-junction solar cells;Solar Energy Materials and Solar Cells;2012-12
3. Highly Strained 1.22-$\mu$m InGaAs Lasers Grown by MOVPE;IEEE Photonics Technology Letters;2008-02
4. Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE;Journal of Crystal Growth;2007-01
5. Low-threshold operation of 1.34-/spl mu/m GaInNAs VCSEL grown by MOVPE;IEEE Photonics Technology Letters;2005-05
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