Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design;Vijaya;J. Vac. Sci. Technol. B,2015
2. Investigation of dilute-nitride alloys of GaAsNx (0.01 < x < 0.04) grown by MBE on GaAs (001) substrates for photovoltaic solar cell devices;Tang;J. Vac. Sci. Tech. B,2016
3. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells;Shao;J. Appl. Phys.,2015
4. High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source;Pinault;J. Appl. Phys.,2005
5. Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation;Klangtakai;J. Cryst. Growth,2007
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