Linewidth enhancement factor of lattice-matched InGaNAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1541097
Reference12 articles.
1. On the linewidth enhancement factor in semiconductor lasers
2. Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers
3. GaInNAs: a novel material for long-wavelength semiconductor lasers
4. Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
5. Thermal characteristics of optical gain for GaInNAs quantum wells at 1.3 μm
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1. Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers;Acta Physica Sinica;2012
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3. Electronic Structure and Optical Properties of Zinc-Blende In x Ga 1− x N y As 1−y by a First-Principles Study;Communications in Theoretical Physics;2011-04
4. Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system;Journal of Applied Physics;2009-09-15
5. Structural analysis of dilute-nitride zinc blende InxGa1−xNyAs1−y cluster by a semiempirical quantum chemistry study;Journal of Applied Physics;2007-06-15
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