Electronic Structure and Optical Properties of Zinc-Blende In x Ga 1− x N y As 1−y by a First-Principles Study
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/55/4/34/pdf
Reference26 articles.
1. Analysis of 1.2μm InGaAs∕GaAs quantum dot laser for high power applications
2. Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
3. First-principles study of structural and electronic properties of different phases of GaAs
4. Beryllium doping of GaAs and GaAsN studied from first principles
5. Bismuth alloying in GaAs: a first-principles study
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2. The structural and optical properties of ternary mixed crystals In Ga1−As with zinc-blende structure by first-principle calculations;Physica B: Condensed Matter;2019-09
3. Bismuth-Related Nanostructures;Bismuth-Containing Alloys and Nanostructures;2019
4. Effect of Surface Dangling Bonds and Molecular Passivation on Doped GaAs Nanowires;Chinese Journal of Chemical Physics;2014-12-27
5. Electronic Structure and Optical Properties ofGaAs1-xBixAlloy;Advances in Condensed Matter Physics;2014
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