Electronic Structure and Optical Properties ofGaAs1-xBixAlloy

Abstract

A first-principles study has been performed to investigate the structural and electronic properties of theGaAs1-xBixsystem. The simulations are based upon the generalized gradient approximation (GGA) within the framework of density functional theory (DFT). Calculations are performed to different Bi concentrations. The lattice constant ofGaAs1-xBixincreases with Bi concentration while the alloy remains in the zinc-blende structure. The band gap ofGaAs1-xBixclearly shrinks with the Bi concentration. The optical transition of Bi dopant in GaAs exhibits a red shift. Besides, other important optical constants, such as the dielectric function, reflectivity, refractive index, and loss function also change significantly.