Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors-Reference-Cited by-同舟云学术

Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors

Published:2021-02-03 Issue:2 Volume:4 Page:1048-1056
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Biswas Subhajit¹²^ORCID,Doherty Jessica¹²,Galluccio Emmanuele²^ORCID,Manning Hugh G.³^ORCID,Conroy Michele⁴,Duffy Ray²,Bangert Ursel⁴,Boland John J.³^ORCID,Holmes Justin D.¹²^ORCID

Affiliation:

1. School of Chemistry and Advanced Materials and Bioengineering Research (AMBER) Centre, University College Cork, Cork T12 YN60, Ireland

2. Tyndall National Institute, University College Cork, Cork T12 R5CP, Ireland

3. School of Chemistry and AMBER, Trinity College Dublin, Dublin 2, Ireland

4. TEMUL, Department of Physics, Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland

Funder

Science Foundation Ireland

Irish Research Council

European Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c02569

Reference55 articles.

1. Growth of silicon based germanium tin alloys

2. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

3. Growth and applications of GeSn-related group-IV semiconductor materials

4. Possibility of increased mobility in Ge-Sn alloy system

5. Electronic properties of metastableGexSn1−xalloys

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