Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
3. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
4. 1.32-μm GaInNAs-GaAs laser with a low threshold current density
5. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
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