Hydrogen-related 3.8 eV UV luminescence in <b> <i>α</i> </b>-Ga2O3-Reference-Cited by-同舟云学术

Hydrogen-related 3.8 eV UV luminescence in α -Ga2O3

Published:2023-02-06 Issue:6 Volume:122 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Nicol D.¹^ORCID,Oshima Y.²^ORCID,Roberts J. W.³,Penman L.¹^ORCID,Cameron D.¹^ORCID,Chalker P. R.³^ORCID,Martin R. W.¹^ORCID,Massabuau F. C.-P.¹^ORCID

Affiliation:

1. University of Strathclyde 1 , Glasgow G4 0NG, United Kingdom

2. National Institute for Materials Science 2 , Tsukuba 3050044, Japan

3. School of Engineering, University of Liverpool 3 , Liverpool L69 3GH, United Kingdom

Abstract

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0135103/16661106/062102_1_online.pdf

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