Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition-Reference-Cited by-同舟云学术

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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Published:2019-12 Issue: Volume:528 Page:125254
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Roberts J.W.,Chalker P.R.,Ding B.,Oliver R.A.,Gibbon J.T.,Jones L.A.H.,Dhanak V.R.,Phillips L.J.,Major J.D.,Massabuau F.C.-P.

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference46 articles.

1. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors;Ghose;J. Appl. Phys.,2017

2. Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD;Alema;J. Cryst. Growth,2017

3. Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1-x)2O3 films;Wakabayashi;J. Cryst. Growth,2015

4. Structural and optical properties of Ga2O3: in films deposited on MgO (1 0 0) substrates by MOCVD;Kong;J. Solid State Chem.,2011

5. Heteroepitaxy of corundum-structured α-Ga2O3 thin films on α-Al2O3 substrates by ultrasonic mist chemical vapor deposition;Shinohara;Jpn. J. Appl. Phys.,2008

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4. Surface and volume energies of α-, β-, and κ-Ga₂O₃ under epitaxial strain induced by a sapphire substrate;Journal of Materials Chemistry C;2024

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