Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate
Author:
Affiliation:
1. Department of Materials Science, Università degli Studi di Milano-Bicocca, via Cozzi 55, 20125 Milano, Italy
Abstract
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04284G
Reference49 articles.
1. A review of Ga2O3materials, processing, and devices
2. β-Gallium oxide power electronics
3. Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications
4. The real structure of ε-Ga2O3 and its relation to κ-phase
5. Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films
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