Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Published:2015-10-21 Issue:15 Volume:118 Page:155301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bazioti C.¹,Papadomanolaki E.²,Kehagias Th.¹,Walther T.³,Smalc-Koziorowska J.⁴,Pavlidou E.¹,Komninou Ph.¹,Karakostas Th.¹,Iliopoulos E.²,Dimitrakopulos G. P.¹

Affiliation:

1. Physics Department, Aristotle University of Thessaloniki, GR 541 24 Thessaloniki, Greece

2. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion Crete, Greece and Physics Department, University of Crete, Heraklion Crete, Greece

3. Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

4. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

EC | Directorate-General for Employment, Social Affairs and Inclusion | European Social Fund & Greek National Funds

Foundation for Polish Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933276

Reference57 articles.

1. Design and characterization of GaN∕InGaN solar cells

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

3. Solid phase immiscibility in GaInN

4. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

5. Observation of ordering and phase separation in InxGa1−xN layers

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