Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)-Reference-Cited by-同舟云学术

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Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Published:2020-11-30 Issue:22 Volume:117 Page:222105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mazzolini Piero¹^ORCID,Falkenstein Andreas²^ORCID,Galazka Zbigniew³^ORCID,Martin Manfred²^ORCID,Bierwagen Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

2. Institute of Physical Chemistry, RWTH Aachen University, D-52056 Aachen, Germany

3. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Funder

Leibniz Association Grant/Reference Number: Leibniz-ScienceCampus “GraFOx”

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0031300

Reference29 articles.

1. A review of Ga2O3materials, processing, and devices

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics

3. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

4. Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

5. Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy

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1. Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio;Applied Surface Science;2024-07

2. Nucleation kinetics of twins in bulk β-Ga2O3 crystal;Materials & Design;2024-07

3. Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices;International Journal of Minerals, Metallurgy and Materials;2024-05-28

4. Assessment of the β-Ga2O3 substrate orientation for µm-level-thick layers via MOVPE process;2024-05-02

5. Molecular Beam Epitaxy of β-(In_xGa_1–x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement;ACS Applied Materials & Interfaces;2024-02-29

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