Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy

Published:2020-02-01 Issue:2 Volume:8 Page:021104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Mauze Akhil¹,Zhang Yuewei¹^ORCID,Itoh Takeki¹,Wu Feng¹,Speck James S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Office of Naval Research

Multidisciplinary University Research Initiative

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5135930

Reference25 articles.

1. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications

4. MBE grown Ga2O3 and its power device applications

5. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

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1. High quality heavy Sn doping β‑Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition;Journal of Alloys and Compounds;2024-10

2. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

3. Enhancement-mode Ga₂O₃ FETs with an unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition;Japanese Journal of Applied Physics;2024-07-01

4. Molecular Beam Epitaxy of β-(In_xGa_1–x)₂O₃ on β-Ga₂O₃ (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement;ACS Applied Materials & Interfaces;2024-02-29

5. Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy;APL Materials;2024-01-01

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