Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1790032
Reference17 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
3. High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
4. Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties
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1. Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode;Semiconductor Science and Technology;2023-10-10
2. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
3. Antisite Defect Si C as a Source of the D I Center in 4H‐SiC;physica status solidi (RRL) – Rapid Research Letters;2022-10-13
4. Analysis of the 4H-SiC Contact Resistance according to the Composition Ratio of Co to Si;Journal of the Korean Physical Society;2020-03
5. First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC;Journal of Applied Physics;2020-02-24
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