First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
Author:
Affiliation:
1. Beijing Computational Science Research Center, Beijing 100193, China
Funder
Science Challenge Project
National Natural Science Foundation of China
NSAF Joint Fund
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140692
Reference38 articles.
1. Fundamentals of Silicon Carbide Technology
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5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
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