A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354460
Reference12 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. A multipoint correlation method with binomial weighting coefficients for deep‐level measurements in metal‐oxide‐semiconductor devices
3. Effects of leakage current on deep level transient spectroscopy
4. Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2
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