Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
Author:
Affiliation:
1. Department of Electronics, Nagoya University, Nagoya 464-8601, Japan
2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya 464-8601, Japan
Funder
Casio Science Promotion Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0073747
Reference29 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Capacitance Transient Spectroscopy
3. Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy
4. Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy
5. Effects of leakage current on deep level transient spectroscopy
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2. Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation;Applied Physics Letters;2023-01-02
3. Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing;Applied Physics Express;2022-11-30
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