Abnormal behavior of midgap electron trap in HB‐GaAs during thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340187
Reference17 articles.
1. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
2. Evidence for two energy levels associated with EL2 trap in GaAs
3. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
4. Study of electron traps inn‐GaAs resulting from infrared rapid thermal annealing
5. On the Physical Origins of the EL2 Center in GaAs
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