Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications-Reference-Cited by-同舟云学术

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Published:2016-09-01 Issue:5 Volume:67 Page:377-382
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Kósa Arpád¹,Mikolášek Miroslav¹,Stuchlíková Ľubica¹,Harmatha Ladislav¹,Dawidowski Wojciech²,Ściana Beata²,Tłaczała Marek²

Affiliation:

1. Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovakia

2. Wrocław University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocław, Poland

Abstract

Abstract This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

Publisher

Walter de Gruyter GmbH

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