Effective work function modulation by controlled dielectric monolayer deposition-Reference-Cited by-同舟云学术

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Effective work function modulation by controlled dielectric monolayer deposition

Published:2006-09-11 Issue:11 Volume:89 Page:113505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pantisano L.,Schram T.,O’Sullivan B.,Conard T.,De Gendt S.,Groeseneken G.,Zimmerman P.,Akheyar A.,Heyns M. M.,Shamuilla S.,Afanas’ev V. V.,Stesmans A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2349310

Reference9 articles.

1. Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

2. Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

3. Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces

4. Electrostatic potential perturbation at the polycrystalline Si∕HfO[sub 2] interface

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