Electrostatic potential perturbation at the polycrystalline Si∕HfO[sub 2] interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference12 articles.
1. Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
2. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
3. V.V. Afanas’ev and A. Stesmans , in High-κ Gate Dielectrics, edited by M. Houssa (IOP, Bristol, 2004), p. 217.
4. High-resolution depth profiling in ultrathin Al2O3 films on Si
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