Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs-Reference-Cited by-同舟云学术

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Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

Published:2006-01 Issue:1 Volume:27 Page:31-33
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang X.P.,Ming-Fu Li ,Ren C.,Yu X.F.,Shen C.,Ma H.H.,Chin A.,Zhu C.X.,Jiang Ning ,Yu M.B.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/33147/01561446.pdf?arnumber=1561446

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3. Work Function Control on High K Metal Gate Stacks;ECS Transactions;2019-12-17

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