Heavy‐doping effects and impurity segregation during high‐pressure oxidation of silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91451
Reference11 articles.
1. Selective Oxidation of Silicon in High Pressure Steam
2. Thermal Oxidation of Heavily Phosphorus‐Doped Silicon
3. Silicon Oxidation Studies: The Oxidation of Heavily B‐ and P‐Doped Single Crystal Silicon
4. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation
5. Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation
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1. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping;Applied Physics Letters;2011-01-10
2. pn-junction delineation in Si devices using scanning capacitance spectroscopy;Journal of Applied Physics;2000-02
3. Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen;Applied Physics Letters;1988-08-08
4. Oxidation Technology—The Application of High Pressure Oxidation to VLSI;Handbook of Advanced Semiconductor Technology and Computer Systems;1988
5. Segregation and transport coefficients of impurities at the Si/SiO2interface;Journal of Applied Physics;1987-02-15
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