Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3537809
Reference18 articles.
1. Fermi-level pinning and passivation on the oxide-covered and bare silicon surfaces and interfaces
2. Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
3. Density difference related to humidity during dry oxidation for ultrathin silicon oxide films
4. EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM
5. Silicon Oxidation Studies: The Oxidation of Heavily B‐ and P‐Doped Single Crystal Silicon
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