Oxidation of Hydrogenated Si(111) by a Radical Propagation Mechanism-Reference-Cited by-同舟云学术

Oxidation of Hydrogenated Si(111) by a Radical Propagation Mechanism

Published:2012-11-14 Issue:46 Volume:116 Page:24607-24615
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Soria Federico A.¹,Patrito Eduardo M.¹,Paredes-Olivera Patricia¹

Affiliation:

1. Instituto de Investigaciones en Físico Química de Córdoba (INFIQC) CONICET-UNC, †Departamento de Fisicoquímica, and ‡Departamento de Matemática y Física Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ciudad Universitaria, X5000HUA Córdoba, Argentina

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp307798s

Reference31 articles.

1. The electronic structure at the atomic scale of ultrathin gate oxides

2. Silicon Surface and Interface Issues for Nanoelectronics

3. Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

4. Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

5. Nanopatterning Si(111) surfaces as a selective surface-chemistry route

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