Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces-Reference-Cited by-同舟云学术

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Oxidation of H-covered flat and vicinal Si(111)-1×1 surfaces

Published:2001-07 Issue:4 Volume:19 Page:1725-1729
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Zhang X.,Chabal Y. J.,Christman S. B.,Chaban E. E.,Garfunkel E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1335680

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111);Nanomaterials;2023-03-08

2. Strain Activation of Surface Chemistry on H-Terminated Si(111);The Journal of Physical Chemistry C;2021-09-07

3. Surface Chemical Composition and Morphology;Handbook of Silicon Wafer Cleaning Technology;2018

4. In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy;Physical Chemistry Chemical Physics;2016

5. Frustrated Etching during H/Si(111) Methoxylation Produces Fissured Fluorinated Surfaces, Whereas Direct Fluorination Preserves the Atomically Flat Morphology;The Journal of Physical Chemistry C;2015-11-06

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