1. Fuoss and Topich, “Heavy-Doping Effects and Impurity Segregation during High Pressure Oxidation of Silicon,” Appl. Phys. Lett., 275 (1980).
2. Grove, A. S., Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, p. 27.
3. Hirayama, M., Miyoshi, H., Tsubouchi, N., and Abe, H., “High-Pressure Oxidation for Thin Gate Insulator Process,” IEEE Trans, on Electron Devices, ED-29, 503 (1982).
4. Hirayama, M., Matsukawa, T., Tsubouchi, N., and Nakata, H., “Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film,” 22nd Annual Proceedings, Reliability Physics Symposium, Las Vegas, p. 146 (1984).
5. Katz, L. E., Howells, B. F., Adda, L. P., Thompson, T., and Carlson, D., “High Pressure Oxidation of Silicon by the Pyrogenic or Pumped Water Technique,” Solid State Technol., 87 (Dec. 1981).