Segregation and transport coefficients of impurities at the Si/SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338089
Reference13 articles.
1. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
2. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation
3. Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation
4. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation
5. Heavy‐doping effects and impurity segregation during high‐pressure oxidation of silicon
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