Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors
Author:
Affiliation:
1. Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Funder
Ministry of Internal Affairs and Communications
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0020359
Reference41 articles.
1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
2. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
3. First Operation of AlGaN Channel High Electron Mobility Transistors
4. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
5. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
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1. Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content;Molecules;2024-03-05
2. Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping;Europhysics Letters;2023-02-01
3. Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs;IEEE Electron Device Letters;2022-08
4. Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics;IEEE Transactions on Electron Devices;2021-11
5. Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate;Silicon;2021-09-13
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