Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01322-x.pdf
Reference39 articles.
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3. Husna Hamza K, Nirmal D (2020) A review of GaN HEMT broadband power amplifiers, AEU. Int J Electron Commun 116:153040. https://doi.org/10.1016/j.aeue.2019.153040
4. Ma C-T, Gu Z-H (2019) Review of GaN HEMT applications in power converters over 500 W. Electronics 8(12):1401. https://doi.org/10.3390/electronics8121401
5. Flack TJ, Pushpakaran BN, Bayne SB (2016) GaN technology for power electronic applications: a review. J Electron Mater 45:2673–2682. https://doi.org/10.1007/s11664-016-4435-3
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