Microstructural analysis of Ga(NAs)/GaP heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749304
Reference14 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Control of structural defects in group III V N alloys grown on Si
3. 29th IEEE PV Specialists Conference New Orleans;Geisz J. F.,2002
4. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
5. Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging
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1. Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells;Advanced Structured Materials;2020
2. Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH;Nanoscale Research Letters;2018-12
3. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
4. Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates;Journal of Applied Physics;2016-01-14
5. Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells;Journal of Luminescence;2013-01
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