Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells-Reference-Cited by-同舟云学术

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Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells

Published:2013-01 Issue: Volume:133 Page:125-128
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Karcher C.,Jandieri K.,Kunert B.,Fritz R.,Volz K.,Stolz W.,Gebhard F.,Baranovskii S.D.,Heimbrodt W.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference17 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Band Anticrossing in GaInNAs Alloys

3. Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells

4. Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)

5. Temperature-dependent exciton luminescence in quantum wells by computer simulation

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1. Energy Scaling of Compositional Disorder in Ternary Transition‐Metal Dichalcogenide Monolayers;Advanced Electronic Materials;2021-05-19

2. Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys;Physical Review B;2016-05-16

3. Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness;Superlattices and Microstructures;2016-05

4. Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures;Journal of Applied Physics;2016-04-14

5. Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells;Solar Energy Materials and Solar Cells;2016-04

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