Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys-Reference-Cited by-同舟云学术

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Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

Published:2016-05-16 Issue:20 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bannow Lars C.,Rubel Oleg,Badescu Stefan C.,Rosenow Phil,Hader Jörg,Moloney Jerome V.,Tonner Ralf,Koch Stephan W.

Funder

Deutsche Forschungsgemeinschaft

Natural Sciences and Engineering Research Council of Canada

Air Force Office of Scientific Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.205202/fulltext

Reference73 articles.

1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

2. Band gap of GaAs1−xBix, 0

3. Band engineering in dilute nitride and bismide semiconductor lasers

4. Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

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