Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates
Author:
Affiliation:
1. Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939889
Reference30 articles.
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4. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating
5. AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser grown on Si substrate
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4. In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases;Microscopy and Microanalysis;2017-08
5. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE;Nanotechnology;2017-02-27
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