Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-27286-4.pdf
Reference32 articles.
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3. Tixier, S. et al. Molecular beam epitaxy growth of GaAs1-xBix. Appl. Phys. Lett. 82, 2245–2247 (2003).
4. Fluegel, B. et al. Giant spin-orbit bowing in GaAs1-xBix. Phys. Rev. Lett. 97, 67205 (2006).
5. Sweeney, S. J. & Jin, S. R. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared. J. Appl. Phys. 113, 43110 (2013).
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