Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-018-2833-6.pdf
Reference70 articles.
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3. Tomioka K, Fukui T (2014) Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth. J Phys D Appl Phys 47:394001
4. Dasgupta NP, Sun J, Liu C, Brittman S, Andrews SC, Lim J, Gao H, Yan R, Yang P (2014) 25th anniversary article: semiconductor nanowires - synthesis, characterization, and applications. Adv Mater 26:2137–2183
5. Glas F (2015) Strain in nanowires and nanowire heterostructures. In: Fontcuberta i, Morral A, Dayeh SA, Jagadish C (eds) Semicond. Nanowires I Growth Theory (Semiconductors Semimetals, Vol. 93), 1st edn. Elsevier Inc, Waltham, San Diego, Oxford, London, pp 79–123
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