EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1315331
Reference24 articles.
1. Effects of ion implantation on deep levels in GaAs
2. Evidence for the creation of the main electron trap in bulk GaAs
3. Optical behavior of theUband in relation to EL2 and EL6 levels in boron‐implanted GaAs
4. On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide
5. Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs
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