Investigation of the Effect of Gamma Radiation on the Electrical and Optical Properties of Dilute GaAs 1-xBi x Grown on Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Investigation of the Effect of Gamma Radiation on the Electrical and Optical Properties of Dilute GaAs 1-xBi x Grown on Molecular Beam Epitaxy

Published:2021 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Alhassan Sultan Saleh,Al mashary Faisal,Felix Jorlandio F.,de Azevedo Walter M.,Alhassni Amra,Almunyif Amjad,Alotaibi Saud,Almalki Abdulaziz,Alhuwayz Maryam,Alghamdi Haifa,Al Saqri N.,Kazakov Igor P.,Albalawi Hind,Henini Mohamed

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference41 articles.

1. Band gap of GaAs1?xBix, 0;S Francoeur;Appl. Phys. Lett,2003

2. Giant spin-orbit bowing in GaAs1-xBix;B Fluegel;Phys. Rev. Lett,2006

3. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing;Z Batool;J. Appl. Phys,2012

4. Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications;V Pa?ebutas;J. Mater. Sci. Mater. Electron,2009

5. Absorption properties of GaAsBi based p-i-n heterojunction diodes;Z Zhou;Semicond. Sci. Technol,2015

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