Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy

Published:2015-10 Issue:10 Volume:15 Page:1230-1237
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Al Saqri N.,Felix J.F.,Aziz M.,Jameel D.,de Araujo C.I.L.,Albalawi H.,Al Mashary F.,Alghamdi H.,Taylor D.,Henini M.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference51 articles.

1. Incorporation of nitrogen in melt grown GaAs;Milanova;J. Optoelectron. Adv. Mater,2009

2. On the oscillator strength in dilute nitride quantum wells on GaAs;Ryczko;J. Appl. Phys.,2012

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs;Kurtz;Appl. Phys. Lett.,1999

4. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers;Tansu;Appl. Phys. Lett.,2002

5. GaInNAs long-wavelength lasers: progress and challenges;Harris;Semicond. Sci. Technol.,2002

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