Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360237
Reference28 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Optical waveguiding in proton‐implanted GaAs
3. Field-induced waveguides and their application to modulators
4. Overlapping electron traps inn‐type silicon studied by capacitance transient spectroscopy
5. Electron traps in bulk and epitaxial GaAs crystals
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