Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4873140
Reference21 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Ohmic contact properties of Ni/C film on 4H-SiC
3. Study of Co- and Ni-based ohmic contacts to n-type 4H-SiC
4. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport
5. Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors
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1. Raman Characterization of Carbon Clusters at the 4H-SiC/Ni Interface of SiC Power Devices Against Different Annealing Methods;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications;Japanese Journal of Applied Physics;2020-11-25
3. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC;Japanese Journal of Applied Physics;2020-04-29
4. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC;Japanese Journal of Applied Physics;2019-10-15
5. Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing;Current Applied Physics;2019-04
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