Raman Characterization of Carbon Clusters at the 4H-SiC/Ni Interface of SiC Power Devices Against Different Annealing Methods
Author:
Affiliation:
1. BASiC Semiconductor Co. Ltd.,National Engineering Laboratory Building B, Digital Technology Park,Shenzhen,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399649.pdf?arnumber=10399649
Reference13 articles.
1. Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
2. Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC
3. Ohmic Contact Behavior of Carbon Films on SiC
4. Nickel based ohmic contacts on SiC
5. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure
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