Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC-Reference-Cited by-同舟云学术

Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Published:2019-10-15 Issue:11 Volume:58 Page:116501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Van Cuong Vuong^ORCID,Ishikawa Seiji,Maeda Tomonori,Sezaki Hiroshi,Yasuno Satoshi,Koganezawa Tomoyuki^ORCID,Miyazaki Takamichi,Kuroki Shin-Ichiro^ORCID

Funder

JSPS KAKENHI

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab47ac/pdf

Reference46 articles.

1. Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

2. High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs

3. Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

4. The Changing Automotive Environment: High-Temperature Electronics

5. Wide bandgap semiconductor materials for high temperature electronics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08

2. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024

3. Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC;Journal of Crystal Growth;2023-07

4. Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing;Materials Science in Semiconductor Processing;2022-11

5. 500℃ high-temperature reliability of Ni/Nb Ohmic contact on n-type 4H-SiC;Japanese Journal of Applied Physics;2021-12-15