Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015
2. Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing;Xu;Mater. Sci. Forum,2019
3. The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-oxide-annealing Conditions;Xu;Mater. Sci. Forum,2019
4. Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC;Lanni;IEEE Trans. Electron Devices,2012
5. Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C;Neudeck;IEEE Electron Device Lett.,2017
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献