Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC-Reference-Cited by-同舟云学术

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Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC

Published:2024-08 Issue: Volume:40 Page:109989
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ge Niannian,Wan Caiping,Lu Wenhao,Jin Zhi,Xu Hengyu

Publisher

Elsevier BV

Reference72 articles.

1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

2. Reliability of 4H-SiC (0001) MOS gate oxide by NO post-oxide-annealing;Xu;Mater. Sci. Forum,2019

3. The Correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions;Xu;Mater. Sci. Forum,2019

4. Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC;Lanni;IEEE Trans. Electron Devices,2012

5. Demonstration of 4H-SiC digital integrated circuits above 800 °C;Neudeck;IEEE Electron Device Lett.,2017

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