Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing-Reference-Cited by-同舟云学术

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Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing

Published:2019-04 Issue:4 Volume:19 Page:521-527
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Wu Yan,Ji Lingfei,Lin Zhenyuan,Hong Minghui,Wang Sicong,Zhang Yongzhe

Funder

National Natural Science Foundation of China

Scientific Research Program of Beijing Municipal Commission of Education

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference42 articles.

1. Application of femtosecond laser irradiation to low-temperature diffusion at the Ni/SiC interface;Ueki;Appl. Phys. Express,2015

2. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/sic junctions;Kunc;Nano Lett.,2014

3. Phosphorus doping into 4h-sic by irradiation of excimer laser in phosphoric solution;Nishi;Jpn. J. Appl. Phys.,2013

4. Simulation study on 4H–SiC power devices with high-k dielectric FP terminations;Song;Diam. Relat. Mater.,2012

5. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

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1. Transient reflectance of silicon carbide during laser-induced phase separation;Applied Physics A;2024-05-08

2. A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

3. A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability;IET Power Electronics;2023-09-05

4. Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment;Journal of Materials Research and Technology;2023-05

5. Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT);Japanese Journal of Applied Physics;2023-02-20

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