Simulation study on 4H–SiC power devices with high-k dielectric FP terminations-Reference-Cited by-同舟云学术

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Simulation study on 4H–SiC power devices with high-k dielectric FP terminations

Published:2012-02 Issue: Volume:22 Page:42-47
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan

Funder

National Science Foundation

13115 Innovation Engineering of Shanxi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. A Novel Tungsten–Nickel Alloy Ohmic Contact to SiC at 900 $^{\circ}\hbox{C}$

2. Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

3. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

4. 1000-V, 30-A 4H-SiC BJTs with high current gain

5. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors

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1. Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices;Microelectronics Journal;2024-10

2. 4H-SiC Schottky Barrier Diode Field Board Terminal Design;2023 International Conference on Telecommunications, Electronics and Informatics (ICTEI);2023-09-11

3. Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation;Micromachines;2023-08-26

4. High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability;2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL);2023-06-25

5. Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes;Materials Science Forum;2020-11

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