Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Published:2014-08-22 Issue:9 Volume:14 Page:5170-5175
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kunc Jan¹²,Hu Yike¹,Palmer James¹,Guo Zelei¹,Hankinson John¹,Gamal Salah H.³,Berger Claire¹⁴,de Heer Walt A.¹³

Affiliation:

1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. Faculty of Mathematics and Physics, Charles University, 12116 Prague, Czech Republic

3. Fac. Sci., Dept. Phys., KAU, Jeddah 21589, Saudi Arabia

4. Institut Néel, Université Grenoble Alpes-CNRS, BP166, 38042 Grenoble Cedex 9, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl502069d

Reference37 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. A roadmap for graphene

3. A Graphene Field-Effect Device

4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

5. Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Graphene–insulator–metal diodes: Enhanced dielectric strength of the Al2O3 barrier;AIP Advances;2024-09-01

2. N-Doped Graphene/MXene Nanocomposite as a Temperature-Adaptive Neuromorphic Memristor;ACS Applied Nano Materials;2024-02-02

3. Graphene Tunneling Diodes: Enhanced Dielectric Strength of the Al2o3 Barrier;2024

4. Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces;ACS Applied Materials & Interfaces;2023-03-29

5. High‐Performance Phosphorene‐Based Transistors Using a Novel Exfoliation‐Free Direct Crystallization on Silicon Substrates;Advanced Materials Interfaces;2020-07-15

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3