Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
1. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
2. 2.6 kV 4H-SiC lateral DMOSFETs
3. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
4. Status and prospects for SiC power MOSFETs
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1. Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties;Journal of Laser Applications;2024-01-08
2. Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation;Materials Research Letters;2022-06-06
3. p-Type carrier concentration enhancement analysis of 4H–SiC by wet chemical laser doping;Materials Science in Semiconductor Processing;2022-06
4. Selective Doping in Silicon Carbide Power Devices;Materials;2021-07-14
5. Selective area laser-assisted doping of SiC thin films and blue light electroluminescence;Journal of Physics D: Applied Physics;2019-09-12
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